EM636165TS-7G View Datasheet(PDF) - Etron Technology
Part Name
Description
Manufacturer
EM636165TS-7G Datasheet PDF : 75 Pages
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EtronTech
1M x 16 SDRAM
EM636165
4 Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", A11 = “V”, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after
the read operation. Once this command is given, any subsequent command cannot occur within a
time delay of {tRP(min.) + burst length}. At full-page burst, only the read operation is performed in
this command and the auto precharge function is ignored.
5 Write command
(RAS# = "H", CAS# = "L", WE# = "L", A11 = “V”, A10 = "L", A0-A7 = Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active
row in an active bank. The bank must be active for at least tRCD(min.) before the Write command is
issued. During write bursts, the first valid data-in element will be registered coincident with the Write
command. Subsequent data elements will be registered on each successive positive clock edge
(refer to the following figure). The DQs remain with high-impedance at the end of the burst unless
another command is initiated. The burst length and burst sequence are determined by the mode
register, which is already programmed. A full-page burst will continue until terminated (at the end of
the page it will wrap to column 0 and continue).
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
C OM M A ND
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQ0 - DQ3
DIN A0
DIN A1
The first data element and the write
are registered on the same clock edge.
DIN A2
DIN A3
don't care
Extra data is masked.
Burst Write Operation (Burst Length = 4, CAS# Latency = 1, 2, 3)
A write burst without the auto precharge function may be interrupted by a subsequent Write,
BankPrecharge/PrechargeAll, or Read command before the end of the burst length. An interrupt
coming from Write command can occur on any clock cycle following the previous Write command
(refer to the following figure).
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
C OM M AND
NOP
WRITE A WRITE B
1 Clk Interval
NOP
NOP
NOP
NOP
NOP
NOP
DQ's
DIN A0
DIN B0
DIN B1
DIN B2
DIN B3
Write Interrupted by a Write (Burst Length = 4, CAS# Latency = 1, 2, 3)
Preliminary
10
Rev. 2.7 Mar. 2006
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