G2SB20-E3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
G2SB20-E3 Datasheet PDF : 4 Pages
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G2SB20, G2SB60 & G2SB80
Vishay General Semiconductor
100
100
10
10
1
0.1
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBL
0.125 (3.17) x 45°
Chamfer
0.825 (20.9)
0.815 (20.7)
0.080 (2.03)
0.060 (1.50)
0.421 (10.7)
0.411 (10.4)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
0.030 (0.76)
0.210 (5.3)
0.190 (4.8)
0.026 (0.66)
0.020 (0.51)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.140 (3.56)
0.128 (3.25)
Polarity shown on front side of case, positive lead beveled corner
Document Number: 88603 For technical questions within your region, please contact one of the following:
Revision: 12-Feb-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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