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Q68000-A3428 View Datasheet(PDF) - Infineon Technologies

Part NameQ68000-A3428 Infineon
Infineon Technologies Infineon
DescriptionNPN Silicon AF Transistors
Q68000-A3428 Datasheet PDF : 4 Pages
1 2 3 4
SMBTA 05
SMBTA 06
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
SMBTA 05
SMBTA 06
Collector-base breakdown voltage
IC = 100 µA
SMBTA 05
SMBTA 06
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 60 V
VCB = 80 V
VCB = 60 V, TA = 150 ˚C
VCB = 80 V, TA = 150 ˚C
SMBTA 05
SMBTA 06
SMBTA 05
SMBTA 06
Collector cutoff current
VCE = 60 V
DC current gain1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
Base-emitter saturation voltage1)
IC = 100 mA, VCE = 1 V
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
60
80
V(BR)CB0
60
80
V(BR)EB0 4
ICB0
100 nA
100 nA
20
µA
20
µA
ICE0
100 nA
hFE
VCEsat
100 –
100 130 170
0.25 V
VBE
1.2
fT
Cobo
100 –
12 –
MHz
pF
1) Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group
2
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