BUK9535-55A View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
| BUK9535-55A Datasheet PDF : 0 Pages | |||
NXP Semiconductors
BUK9535-55A
N-channel TrenchMOS logic level FET
25
gfs
(S)
20
003aaf291
15
10
5
0
0
5 10 15 20 25 30 35
ID (A)
VDS > ID x RDSon
3.5
a
2.5
1.5
0.5
−100
0
003aaf292
100
200
Tmb (°C)
Fig 11. Forward transconductance as a function of
drain current; typical values
ID = 25 A; VGS = 5 V
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
2.5
VGS(th)
(V)
2.0
1.5
1.0
maximum
typical
minimum
003aaf293
10−1
ID
(A)
10−2
10−3
10−4
003aaf294
2%
typical
98 %
0.5
10−5
0
−100
0
100
200
Tj (°C)
ID = 1 mA; VDS = VGS
Fig 13. Gate-source threshold voltage as a function of
junction temperature
10−6
0.5
1.0
1.5
2.0
2.5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 14. Sub-threshold drain current as a function of
gate-source voltage
BUK9535-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 April 2011
© NXP B.V. 2011. All rights reserved.
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