MMSF5P02HDR2 View Datasheet(PDF) - Motorola => Freescale

Part Name

Description

Manufacturer

MMSF5P02HDR2

SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS RDS(on) = 0.03 OHM

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0)

(1) (3)

V(BR)DSS

20

—

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

—

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk ≥ 2.0)

(1) (3)

VGS(th)

(VDS = VGS, ID = 0.25 mAdc)

0.7

Threshold Temperature Coefficient (Negative)

—

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 6.4 Adc)

(VGS = 2.5 Vdc, ID = 5.1 Adc)

(Cpk ≥ 2.0)

(1) (3)

RDS(on)

—

—

On–State Drain Current

(VDS ≤ 5.0 V, VGS = 4.5 V)

(VDS ≤ 5.0 V, VGS = 2.5 V)

ID(on)

10

5.0

Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc)

(1)

gFS

14

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 6.0 Vdc, ID = 1.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω) (1)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

See Figure 8

(VDS = 6.0 Vdc, ID = 6.4 Adc,

VGS = 4.5 Vdc) (1)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 2.5 Adc, VGS = 0 Vdc) (1)

(IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

See Figure 15

(IS = 2.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

trr

—

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

(4) Repetitive rating; pulse width limited by maximum junction temperature.

MMSF5P02HD

Typ

Max

Unit

Vdc

—

—

10

—

mV/°C

µAdc

—

1.0

—

25

—

100

nAdc

Vdc

0.9

1.4

2.6

—

mV/°C

mΩ

22

30

35

45

A

—

—

—

—

18

—

Mhos

1400

1960

pF

925

1300

370

520

19

40

ns

28

55

130

200

90

150

27.3

38

nC

3.4

—

12

—

8.0

—

Vdc

0.77

1.2

0.6

—

95

180

ns

35

—

60

—

0.151

—

µC

Motorola TMOS Power MOSFET Transistor Device Data

3

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