D1985P View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
Manufacturer
D1985P Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1985 2SD1985A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
breakdown voltage
2SD1985
2SD1985A
IC=30mA , IB=0
VCEsat Collector-emitter saturation voltage IC=3A;IB=0.375A
VBE
Base-emitter voltage
VCE=4V;IC=3A
ICES
Collector
cut-off current
2SD1985 VCE=60V;IB=0
2SD1985A VCE=80V;IB=0
ICEO
Collector
cut-off current
2SD1985 VCE=30V;IB=0
2SD1985A VCE=60V;IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A; VCE=5V;f=10MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;IB1=0.1A
IB2=-0.1A;VCC=50V
MIN TYP. MAX UNIT
60
V
80
1.2
V
1.8
V
200
µA
300
µA
1
mA
70
250
10
30
MHz
0.5
µs
2.5
µs
0.4
µs
hFE-1 Classifications
Q
P
70-150
120-250
2
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