BDV64 View Datasheet(PDF) - Power Innovations Ltd

Part Name

Description

Manufacturer

BDV64

PNP SILICON POWER DARLINGTONS

Power Innovations Ltd 

BDV64, BDV64A, BDV64B, BDV64C

PNP SILICON POWER DARLINGTONS

JUNE 1993 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BDV64

-60

Collector-emitter

V(BR)CEO breakdown voltage

IC = -30 mA IB = 0

(see Note 4)

BDV64A

BDV64B

-80

-100

BDV64C

-120

VCB = -30 V IB = 0

BDV64

-2

ICEO

Collector-emitter

cut-off current

VCB = -40 V

VCB = -50 V

IB = 0

IB = 0

BDV64A

-2

BDV64B

-2

VCB = -60 V IB = 0

BDV64C

-2

VCB = -60 V IE = 0

BDV64

-0.4

VCB = -80 V IE = 0

BDV64A

-0.4

VCB = -100 V IE = 0

BDV64B

-0.4

ICBO

Collector cut-off

current

VCB = -120 V

VCB = -30 V

IE = 0

IE = 0

TC = 150°C

BDV64C

BDV64

-0.4

-2

VCB = -40 V IE = 0

TC = 150°C

BDV64A

-2

VCB = -50 V IE = 0

TC = 150°C

BDV64B

-2

VCB = -60 V IE = 0

TC = 150°C

BDV64C

-2

Emitter cut-off

IEBO current

VEB = -5 V IC = 0

-5

Forward current

hFE

transfer ratio

VCE = -4 V IC = -5 A

(see Notes 4 and 5)

1000

Collector-emitter

VCE(sat) saturation voltage

IB = -20 mA IC = -5 A

(see Notes 4 and 5)

-2

Base-emitter

VBE

voltage

VCE = -4 V IC = -5 A

(see Notes 4 and 5)

-2.5

Parallel diode

VEC forward voltage

IE = -10 A IB = 0

(see Notes 4 and 5)

-3.5

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

V

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

1 °C/W

35.7 °C/W

PRODUCT INFORMATION

2

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