MMSF3300 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MMSF3300 Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
WaveFET™
Power Surface Mount Products
HDTMOS Single N-Channel
™
Field Effect Transistor
WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and
D
Extends Battery Life in Portable Applications
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
G
• Avalanche Energy Specified
• Miniature SO–8 Surface Mount Package —
S
Saves Board Space
Order this document
by MMSF3300/D
MMSF3300
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 12.5 mW
CASE 751– 06, Style 12
SO–8
Source
18
Drain
Source
27
Drain
Source
36
Drain
Gate
45
Drain
TOP VIEW
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain–to–Source Voltage
Drain–to–Gate Voltage
Gate–to–Source Voltage
Gate–to–Source Operating Voltage
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc)
Symbol
Value
Unit
VDSS
30
Vdc
VDGR
30
Vdc
VGS
± 20
Vdc
VGS
± 16
Vdc
TJ, Tstg – 55 to 150
°C
EAS
mJ
500
DEVICE MARKING
ORDERING INFORMATION
S3300
Device
MMSF3300R2
Reel Size
13″
Tape Width
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Quantity
2500 units
REV 3
©MMoottoororolal,aInTc.M19O9S8 Power MOSFET Transistor Device Data
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