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RSS100N03 Ver la hoja de datos (PDF) - ROHM Semiconductor

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RSS100N03 Silicon N-channel MOS FET ROHM
ROHM Semiconductor ROHM
RSS100N03 Datasheet PDF : 4 Pages
1 2 3 4
Transistor
100
10
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta= −25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
RSS100N03
300
Ta=25°C
Pulsed
250
200
ID=10A
ID=5A
150
100
50
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
100
Ta=125°C
10
Ta=75°C
Ta=25°C
Ta= −25°C
1
VGS=0V
Pulsed
0.1
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
Ta=125°C
100
Ta=75°C
Ta=25°C
Ta= −25°C
10
VGS=10V
Pulsed
1000
Ta=125°C
100
Ta=75°C
Ta=25°C
Ta= −25°C
10
VGS=4.5V
Pulsed
1000
Ta=125°C
100 Ta=75°C
Ta=25°C
Ta= −25°C
10
VGS=4V
Pulsed
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
3/3
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