7721 View Datasheet(PDF) - BI Technologies
Part Name
Description
Manufacturer
7721 Datasheet PDF : 5 Pages
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ELECTRICAL CHARACTERISTICS (7721-1A)
Parameter
Q1-Q4 IGBT
Continuous Collector Current
Pulsed Collector Current
Reverse Avalanche Energy
Collector Leakage Current
Saturation Voltage
Gate Threshold Voltage
Gate Leakage Current
Total Gate Charge (turn on)
Gate Emitter Charge (turn on)
Gate Collector Charge (turn on)
Turn Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Junction Temperature
Thermal Resistance
D1-D4 Fred Diodes
Reverse Leakage Current
Forward Voltage
Reverse Recovery Time
Junction Temperature
Thermal Resistance
TH1 NTC Thermistor
Resistance
Resistance Ratio
Dissipation Constant
Thermal Time Constant
Symbol Conditions1
Min.
IC
TC = 25°C
TC = 100°C
ICM
EAVR
ICES
VGE = 0V, VCE = 500V
VCE(ON) IC = 22A, VGE = 15V
IC = 40A, VGE = 15V
VGE(TH) VCE = VGE, IC = 250µA
3.0
IGES
VGE = ±20V
Qg
IC = 22A, VCC = 400V,VGE = 15V
Qge
IC = 22A, VCC = 400V,VGE = 15V
Qgc
IC = 22A, VCC = 400V,VGE = 15V
td(off)
IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail
tf
IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail
Ets
IC = 22A, VCC = 400V,VGE = 15V,RG = 10Ω w/tail
Cies
VGE = 0V, VCC = 30V, f = 1MHz
Coes
VGE = 0V, VCC = 30V, f = 1MHz
Cres
VGE = 0V, VCC = 30V, f = 1MHz
TJ
Rthjc
IR
VR = 600V
VR = .8x600V, TJ = 125°C
VF
IF = 8A
IF = 8A, TJ = 150°C
trr
IF = 1A, -di/dt = 50A/µs, VR = 30V
Tj
Rthjc
R25
I = 1mA
22.5
RT/R25 t = 80°C
t = 90°C
t = 100°C
t = 110°C
PD
t
Typ. Max. Units
2.4
2.8
55
11
19
100
56
.55
1400
250
42
40
22
80
15
250
3.0
5.5
±100
83
17
29
150
100
.70
150
.94
A
A
A
mJ
µA
V
V
V
nA
nC
nC
nC
ns
ns
mJ
pF
pF
pF
°C
°C/W
20 µA
1.5 mA
1.5 V
1.3 V
35 50 ns
150 °C
3.1 °C/W
25
.126
.0916
.0679
.0511
1.0
27.5 KΩ
mW/°C
10 sec
1 - TCase = 25°C unless otherwise specified.
7-32
Model 7721 Series
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