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STQ1NC45 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STQ1NC45 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
450
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.3
3
3.7
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
4.1
4.5
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 0.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
1.1
160
27.5
4.7
Max.
Unit
V
µA
µA
nA
V
Unit
S
pF
pF
pF
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 225 V, ID = 0.5 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 360V, ID = 1.5 A,
VGS = 10V, RG = 4.7
Min.
Typ.
6.7
4
7
1.3
3.2
Max.
10
Unit
ns
ns
nC
nC
nC
Test Conditions
VDD = 360V, ID = 1.5 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
8.5
12
18
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 1.5 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.5 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
1.5
A
6.0
A
1.6
V
225
ns
530
µC
4.7
A
3/11
 

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