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NE3210S01 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
Manufacturer
NE3210S01
NEC
NEC => Renesas Technology NEC
NE3210S01 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
NE3210S01-T1
Tape & reel 1 000 pcs./reel
NE3210S01-T1B
Tape & reel 4 000 pcs./reel
Marking
K
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–65 to +125
°C
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Characteristics
Symbol MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
0
dBm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14067EJ2V0DS00 (2nd edition)
The mark shows major revised points.
©
Date Published November 1999 N CP(K)
Printed in Japan
1999
 

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