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NTE2598 View Datasheet(PDF) - NTE Electronics

Part NameDescriptionManufacturer
NTE2598 Silicon NPN Transistor High Voltage, High Current Switch NTE-Electronic
NTE Electronics NTE-Electronic
NTE2598 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
1100
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10A, RBE =
800
EmitterBase Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
7
CollectorEmitter Sustaining Voltage VCEO(sus) IC = 12A, IB1 = IB2 = 2.4A, 800
l = 50µH, Clamped
V
V
V
V
TurnOn Time
Storage Time
Fall Time
ton
VCC = 400V,
tstg
5IB1 = 2.5IB2 = IC = 20A,
RL = 20
tf
– – 0.5 µs
– – 3.0 µs
– – 0.3 µs
.236
(6.0)
.810(20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
BCE
Note: Collector connected to heat sink.
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