MMSF3P03HDR2 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MMSF3P03HDR2

Power MOSFET 3 Amps, 30 Volts

ON Semiconductor 

MMSF3P03HD

100

VGS = 20 V

SINGLE PULSE

TC = 25°C

10

10 µs

100 µs

1 ms

10 ms

1

dc

RDS(on) LIMIT

0.1

THERMAL LIMIT

PACKAGE LIMIT

Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″

thick single sided), 10s max.

0.01

0.1

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

600

ID = 9 A

500

400

300

200

100

0

25

50

75

100

125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

TYPICAL ELECTRICAL CHARACTERISTICS

10

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

1.0E−05

SINGLE PULSE

1.0E−04

1.0E−03

Normalized to θja at 10s.

Chip 0.0163 Ω 0.0652 Ω 0.1988 Ω 0.6411 Ω 0.9502 Ω

0.0307 F 0.1668 F

0.5541 F 1.9437 F

72.416 F Ambient

1.0E−02

1.0E−01

t, TIME (s)

1.0E+00

Figure 14. Thermal Response

1.0E+01

1.0E+02

1.0E+03

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 15. Diode Reverse Recovery Waveform

http://onsemi.com

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