STP11NM60 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP11NM60

N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET

STMicroelectronics 

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

tr(Voff)

tf

tc

Off-voltage rise time

Fall time

Cross-over time

Test conditions

VDD=300 V, ID=5.5A,

RG=4.7Ω, VGS=10V

(see Figure 17)

VDD=480V, ID=11A,

RG=4.7Ω, VGS=10V

(see Figure 17)

Min. Typ. Max. Unit

20

ns

20

ns

6

ns

11

ns

19

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=11A, VGS=0

ISD=11A,

di/dt = 100A/µs,

VDD=100V, Tj=25°C

(see Figure 16)

ISD=11A,

di/dt = 100A/µs,

VDD=100V, Tj=150°C

(see Figure 16)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

11 A

44 A

1.5 V

390

ns

3.8

µC

19.5

A

570

ns

5.7

µC

20

A

5/16

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