STP11NM60FP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP11NM60FP

N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET

STMicroelectronics 

STP11NM60 - STP11NM60FP

STB11NM60 - STB11NM60-1

N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK

MDmesh™ Power MOSFET

General features

Type

STP11NM60

STP11NM60FP

STB11NM60

STB11NM60-1

VDSS

(@TJ=TJmax)

RDS(on)

ID

650V

<0.45Ω 11A

650V

<0.45Ω 11A

650V

<0.45Ω 11A

650V

<0.45Ω 11A

■ High dv/dt and avalanche capabilities

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Description

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain

process with the Company’s PowerMESH™

horizontal layout. The resulting product has an

outstanding low on-resistance, impressively high

dv/dt and excellent avalanche characteristics. The

adoption of the Company’s proprietary strip

technique yields overall dynamic performance

that is significantly better than that of similar

competition’s products.

Applications

■ Switching application

3

2

1

TO-220

3

2

1

TO-220FP

3

1

D2PAK

123

i2PAK

Internal schematic diagram

Order codes

Part number

STB11NM60T4

STB11NM60-1

STP11NM60

STP11NM60FP

Marking

B11NM60

B11NM60-1

P11NM60

P11NM60FP

Package

D²PAK

I²PAK

TO-220

TO-220FP

Packaging

Tape & reel

Tube

Tube

Tube

January 2007

Rev 6

1/16

www.st.com

16

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