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D1397 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
D1397
Iscsemi
Inchange Semiconductor Iscsemi
D1397 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector- emitter sustaining voltage IC=100mA; RBE=
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.8A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
VF
Diode forward voltage
IEC=3.5A
Product Specification
2SD1397
MIN TYP. MAX UNIT
800
V
1500
V
7
V
8.0
V
1.5
V
10 μA
40
130 mA
8
3
MHz
2.0
V
2
 

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