MC-4516DA726F View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

MC-4516DA726F

16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

NEC => Renesas Technology 

MC-4516DA726

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 1 ms and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

Symbol

Condition

Rating

Unit

Voltage on power supply pin relative to GND

VCC

Voltage on input pin relative to GND

VT

Short circuit output current

IO

Power dissipation

PD

Operating ambient temperature

TA

Storage temperature

Tstg

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

21

W

0 to +70

°C

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

Symbol

Supply voltage

VCC

High level input voltage

VIH

Low level input voltage

VIL

Operating ambient temperature

TA

Condition

MIN.

3.0

2.0

–0.3

0

TYP. MAX. Unit

3.3

3.6

V

VCC + 0.3 V

+ 0.8

V

70

°C

Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Symbol

Test condition

MIN. TYP. MAX. Unit

Input capacitance

CI1 A0 - A11, BA0 (A13), BA1 (A12), 4

/RAS, /CAS, /WE

CI2

CLK0 - CLK3

15

10

pF

35

CI3

CKE0

8

18

CI4

/CS0, /CS2

4

10

CI5

DQMB0 - DQMB7

4

10

Data input/output capacitance

CI/O DQ0 - DQ63, CB0 - CB7

6

13

pF

Data Sheet M13203EJ3V0DS00

5

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