E1010 View Datasheet(PDF) - Estek Electronics Co. Ltd

Part Name

Description

Manufacturer

E1010

HEXFET Power MOSFET

Estek Electronics Co. Ltd 

Thermal Resistance

E 1010

HEXFET® Power MOSFET

RθJC

RθCS

RθJA

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.50

–––

Max.

0.75

–––

62

Units

°C/W

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Test Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 60 — — V VGS=0V,ID=250uA

△V(BR)DSS/△TJ Breakdown Voltage Temp. Coefficient — 0.064 — V/ْC Reference to 25ْC,ID=1mA

RDS(on) Static Drain-to-Source On-Resistance — — 13 mΩ VGS=10V,ID=50A ④

VGS(th) Gate Threshold Voltage

2.0 — 4.0 V VDS=VGS, ID=250μA

gfs

Forward Transconductance

20 — — S VDS=25V,ID=50A ④

IDSS

Drain-to-Source Leakage current

— — 25 μA VDS=60V,VGS=0V

— — 250

VDS=48V,VGS=0V,TJ=150ْC

Gate-to-Source Forward leakage

IGSS

Gate-to-Source Reverse leakage

— — 100

VGS=20V

nA

— — -100

VGS=-20V

Qg

Total Gate Charge

— — 130

ID=50A

Qgs

Gate-to-Source charge

— — 28 nC VDS=48V

Qgd

Gate-to-Drain ("Miller") charge

— — 44

VGS=10V See Fig.6 and 13④

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

— 12 —

VDD=30V

— 78 —

ID=50A

— 48 — nS RG=3.6Ω

— 53 —

VGS =10V See Figure 10④

LD

Internal Drain Inductance

— 4.5 —

Between lead,

6mm(0.25in.)

nH from package

LS

Internal Source Inductance

— 7.5 —

and center of

die contact

Ciss

Input Capacitance

— 3210 —

VGS=0V

Coss

Crss

Output Capacitance

Reverse Transfer Capacitance

— 690 — pF VDS=25V

— 140 —

f=1.0MHZ See Figure 5

EAS

Single Pulse Avalanche Energy.

— 1180 320 mJ IAS = 50A, L = 260μH

2

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