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E1010 View Datasheet(PDF) - Estek Electronics Co. Ltd

Part Name
Description
Manufacturer
E1010
ESTEK
Estek Electronics Co. Ltd ESTEK
E1010 Datasheet PDF : 3 Pages
1 2 3
E 1010
HEXFET® Power MOSFET
z Advanced Process Technology
z Ultra Low On-Resistance
z Dynamic dv/dt Rating
z 175°C Operating Temperature
z Fast Switching
z Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design
that HEXFET power MOSFETs are well known
for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC =
100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt .
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
VDSS = 60V
ID = 84A
RDS(ON) =13mΩ
Pin1–Gate
Pin2–Drain
Pin3–Source
Max.
84.
59
330
170
1.4
± 20
50
17
4.0
-55 to + 175
300 (1.6mm from
case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
1
 

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