PZT3904T1G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
| PZT3904T1G Datasheet PDF : 0 Pages | |||
PZT3904T1G
General Purpose Transistor
NPN Silicon
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector -- Emitter Voltage
Collector -- Base Voltage
Emitter -- Base Voltage
Collector Current -- Continuous
THERMAL CHARACTERISTICS
VCEO
40
Vdc
VCBO
60
Vdc
VEBO
6.0
Vdc
IC
200 mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25C
Thermal Resistance Junction--to--Ambient
(Note 1)
PD
RθJA
1.5
W
12 mW/C
83.3 C/W
Thermal Resistance Junction--to--Lead #4
Junction and Storage Temperature Range
RθJA
TJ, Tstg
35
-- 55 to
+150
C/W
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-- 4 with 1 oz and 713 mm2 of copper area.
http://onsemi.com
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING
DIAGRAM
SOT--223
CASE 318E
STYLE 1
AYW
1AM G
G
1
1AM = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
PZT3904T1G SOT--223 1000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 3
Publication Order Number:
PZT3904T1/D
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