1SS120 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

1SS120

Silicon Epitaxial Planar Diode for High Speed Switching

Renesas Electronics 

1SS120

Absolute Maximum Ratings

Item

Peak reverse voltage

Reverse voltage

Average rectified current

Peak forward current

Non-Repetitive peak forward surge current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

VRM

VR

IO

IFM

IFSM *

Pd

Tj

Tstg

Symbol

Value

70

60

150

450

1

250

175

−65 to +175

(Ta = 25°C)

Unit

V

V

mA

mA

A

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Forward voltage

VF

—

—

0.8

V

IF = 10 mA

Reverse current

IR

—

—

0.1

µA VR = 60 V

Capacitance

C

—

—

3.0

pF VR = 1 V, f = 1 MHz

Reverse recovery time trr *

—

—

3.5

ns IF = 10 mA, VR = 6 V, RL = 50 Ω

Note: Reverse recovery time test circuit

DC

Supply

Ro = 50 Ω

Pulse

Generator

0.1 µF

3 kΩ

Sampling

Oscilloscope

Rin = 50 Ω

Trigger

Rev.4.00 Mar 24, 2005 page 2 of 4

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