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Part Name
Description
BUZ103SL-4 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BUZ103SL-4
SIPMOS ® Power Transistor
Infineon Technologies
BUZ103SL-4 Datasheet PDF : 8 Pages
1
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5
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7
8
Preliminary data
BUZ 103SL-4
Avalanche energy
E
AS
=
Æ’
(
T
j
)
parameter:
I
D
= 4.8 A,
V
DD
= 25 V
R
GS
= 25
Ω
,
L
= 12 mH
150
mJ
130
E
AS
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 5 A
16
V
V
GS
12
10
8
6
0,2
V
DS max
0,8
V
DS max
4
2
0
0 5 10 15 20 25 30 35 40 nC 50
Q
Gate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60 -20
20
60 100 °C 180
T
j
Semiconductor Group
8
05/Sep/1997
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