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Y100N10E View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
Y100N10E Power MOSFET 100 Amps, 100 Volts ON-Semiconductor
ON Semiconductor ON-Semiconductor
Y100N10E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MTY100N10E
SAFE OPERATING AREA
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
10 μs
100 μs
1 ms
10
10 ms
RDS(on) LIMIT
dc
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
250
ID = 100 A
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E−03
1.0E−02
t, TIME (s)
1.0E−01
Figure 13. Thermal Response
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
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