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Y100N10E View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
Y100N10E Power MOSFET 100 Amps, 100 Volts ON-Semiconductor
ON Semiconductor ON-Semiconductor
Y100N10E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MTY100N10E
12
10
8
Q1
6
4
120 10000
QT
VDD = 50 V
100
ID = 100 A
VGS
VGS = 10 V
80
TJ = 25°C
1000
Q2
tr
60
tf
TJ = 25°C
40
100
td(off)
ID = 100 A
2
20
td(on)
Q3
0
VDS
0
10
0
50
100
150
200
250
300
1
Qg, TOTAL GATE CHARGE (nC)
10
100
RG, GATE RESISTANCE (OHMS)
Figure 8. Gate Charge versus GatetoSource Voltage
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAINTOSOURCE DIODE CHARACTERISTICS
100
80
VGS = 0 V
TJ = 25°C
60
40
20
0
0.5
0.6
0.7
0.8
0.9
1
1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 μs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RθJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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