2PD602A View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
| 2PD602A Datasheet PDF : 0 Pages | |||
NXP Semiconductors
NPN general purpose transistor
Product data sheet
2PD602A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PD602AQ
2PD602AR
2PD602AS
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PD602AQ
2PD602AR
2PD602AS
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 300 mA; IB = 30 mA; note 1
MIN.
−
−
−
85
120
170
40
−
MAX.
10
5
10
170
240
340
−
600
UNIT
nA
μA
nA
mV
IE = ie = 0; VCB = 10 V; f = 1 MHz −
15
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
140
−
160
−
180
−
pF
MHz
MHz
MHz
1999 Apr 23
3
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