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MMBZ12VAL View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
MMBZ12VAL Double ESD protection diodes for transient overvoltage suppression NXP
NXP Semiconductors. NXP
MMBZ12VAL Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
150
IPP
(%)
100
100 % IPP; 10 µs
006aab319
IPP
100 %
90 %
001aaa631
50 % IPP; 1000 µs
50
0
0
1.0
2.0
3.0
4.0
tp (ms)
Fig 1. 10/1000 µs pulse waveform according to
IEC 61643-321
10 %
tr = 0.7 ns to 1 ns
t
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 9. Thermal characteristics
Symbol Parameter
Conditions
Per device
Rth(j-a)
thermal resistance from junction in free air
to ambient
Rth(j-sp)
thermal resistance from junction
to solder point
Min Typ Max Unit
[1] -
-
460 K/W
[2] -
-
340 K/W
[3] -
-
50 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Measured from pin 1 or 2 to pin 3.
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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