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MMBZ12VAL View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
MMBZ12VAL Double ESD protection diodes for transient overvoltage suppression NXP
NXP Semiconductors. NXP
MMBZ12VAL Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
PPPM
IPPM
rated peak pulse power
rated peak pulse current
MMBZ12VAL
MMBZ12VAL/DG
tp = 10/1000 µs
tp = 10/1000 µs
[1][2] -
[1][2]
-
MMBZ15VAL
-
MMBZ15VAL/DG
MMBZ18VAL
-
MMBZ18VAL/DG
MMBZ20VAL
-
MMBZ20VAL/DG
MMBZ27VAL
-
MMBZ27VAL/DG
MMBZ33VAL
-
MMBZ33VAL/DG
Per device
Ptot
total power dissipation
Tamb 25 °C
[3] -
[4] -
Tj
junction temperature
-
Tamb
ambient temperature
55
Tstg
storage temperature
65
Max Unit
40
W
2.35 A
1.9
A
1.6
A
1.4
A
1
A
0.87 A
265
mW
360
mW
150
°C
+150 °C
+150 °C
[1] In accordance with IEC 61643-321 (10/1000 µs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Min Max Unit
[1][2]
-
-
30 kV
2
kV
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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