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MMBZ12VAL View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
MMBZ12VAL Double ESD protection diodes for transient overvoltage suppression NXP
NXP Semiconductors. NXP
MMBZ12VAL Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MMBZxVAL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 1 September 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1. Product overview
Type number[1]
Package
NXP
MMBZ12VAL
SOT23
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
JEDEC
TO-236AB
[1] All types available as /DG halogen-free version.
Configuration
dual common anode
1.2 Features
I Unidirectional ESD protection of
I ESD protection up to 30 kV (contact
two lines
discharge)
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)
I Low diode capacitance: Cd 140 pF I IEC 61643-321
I Rated peak pulse power: PPPM 40 W I AEC-Q101 qualified
I Ultra low leakage current: IRM 5 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Automotive electronic control units
I Portable electronics
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