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ES1AF View Datasheet(PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Part Name
Description
Manufacturer
ES1AF
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD YFWDIODE
ES1AF Datasheet PDF : 0 Pages
ES1AF THRU ES1JF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Note1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
-1.0
10ns/div
Set time Base for 10ns/div
Fig.2 Maximum Average Forward Current Rating
1.2
1.0
0.8
0.6
0.4 Single phase half wave resistive
or inductive P.C.B mounted on
0.315×0. 315"(8.0×8. 0mm)
0.2 pad areas
0.0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig.3 Typical Reverse Characteristics
300
100
10
TJ=125°C
TJ=75°C
1.0
TJ=25°C
0.1
0
20
40
60
80
100
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
10
TJ=25°C
1.0
0.1
ES1AF
ES1EF
ES1JF
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instaneous Forward Voltage (V)
Fig.5 Typical Junction Capacitance
14
12
10
8
6
TJ=25°C
4
f = 1.0MHz
Vsig = 50mVp-p
2
0.1
1
10
100
Reverse Voltage (V)
 

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