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Part Name
Description
STP3NA90FI View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP3NA90FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
STP3NA90FI Datasheet PDF : 0 Pages
STP3NA90/FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symb ol
t
d(on)
t
r
(di/ dt)
on
Q
g
Q
gs
Q
gd
P a ram et er
Turn-on T ime
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 450 V
R
G
= 4.7
Ω
I
D
= 1.5 A
V
GS
= 10 V
V
DD
= 720 V
R
G
= 47
Ω
V
DD
= 720 V
I
D
=3 A
I
D
= 3 A
V
GS
= 10 V
V
GS
= 10 V
Min.
Typ .
10
10
360
35
6
14
M a x.
15
15
50
Unit
ns
ns
A/
µ
s
nC
nC
nC
SWITCHING OFF
Symb ol
t
r(Vo f f)
t
f
t
c
P a ram et er
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
V
DD
= 720 V
R
G
= 4.7
Ω
I
D
= 3 A
V
GS
= 10 V
Min.
Typ .
11
8
19
M a x.
10
13
26
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
P a ram et er
Test Conditions
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
( pu ls ed)
V
SD
(
∗
) Forward O n Volt age
I
SD
= 3 A
t
rr
Reverse Recovery
I
SD
= 3 A
Time
Q
rr
Reverse Recovery
Charge
V
DD
= 100 V
I
RRM
Reverse Recovery
Cu r re nt
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
V
GS
= 0
di/dt = 100 A/
µ
s
T
j
= 150
o
C
Min.
Typ .
950
14.2
30
M a x.
3
12
1.6
Unit
A
A
V
ns
µ
C
A
3/6
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