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IRFP150A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
IRFP150A
Fairchild
Fairchild Semiconductor Fairchild
IRFP150A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Advanced Power MOSFET
IRFP150A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.032 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.04
ID = 43 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
100
43
30.4
170
+_ 20
740
43
19.3
6.5
193
1.28
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.78
--
40
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
 

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