DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

D1415A View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
D1415A Datasheet PDF : 5 Pages
1 2 3 4 5
2SD1415A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1415A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
Collector current
IC
7
A
Pulse
ICP
10
Base current
IB
0.7
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
25
JEDEC
JEITA
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
55 to 150
°C
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1
2009-12-21
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]