Electrical characteristics
STM32F103xx
Table 12.
Symbol
Maximum current consumption in Stop and Standby modes(1)
Typ(2)
Max(3)
Parameter
Conditions
VDD/ VBAT VDD/VBAT TA = TA = Unit
= 2.4 V = 3.3 V 85 °C 105 °C
Regulator in Run mode,
Low-speed and high-speed internal
RC oscillators and high-speed
oscillator OFF (no independent
Supply current watchdog)
in Stop mode Regulator in Low Power mode,
IDD
Low-speed and high-speed internal
RC oscillators and high-speed
oscillator OFF (no independent
watchdog)
Supply current Low-speed internal RC oscillator and
in Standby independent watchdog OFF, low-
mode(5)
speed oscillator and RTC OFF
IDD_VBAT
Backup domain
supply current
Low-speed oscillator and RTC ON
TBD
TBD(4)
TBD(4)
1(4)
24
TBD TBD
14(4)
TBD(4) TBD(4) µA
2(4)
TBD(4) TBD(4)
1.4(4) TBD(4) TBD(4)
1. TBD stands for to be determined.
2. Typical values are measured at TA = 25 °C, VDD = 3.3 V, unless otherwise specified.
3. Data based on characterization results, tested in production at VDD max, fHCLK max. and TA max (for other temperature.
4. Values expected for next silicon revision.
5. To have the Standby consumption with RTC ON, add IDD_VBAT (Low-speed oscillator and RTC ON) to IDD Standby (when
VDD is present the Backup Domain is powered by VDD supply).
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