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BTA06T-600CWRG View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BTA06T-600CWRG
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA06T-600CWRG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
BTA06T-600CWRG
Figure 7. Surge peak on-state current versus Figure 8. Non-repetitive surge peak on-state
number of cycles
current for sinusoidal
ITSM(A)
50
45
40
35
30
25
20
15
10
Repetitive
TC=100 °C
5
0
1
Non repetitive
Tj initial=25 °C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
Tj initial=25 °C
ITSM
100
pulse tp < 10 ms, and corresponding value of I2t
10
1
0.01
I²t
tP(ms)
0.10
1.00
10.00
Figure 9. On-state characteristics
(maximum values)
Figure 10. Relative variation of critical rate of
decrease of main current (di/dt)c
versus junction temperature
ITM(A)
100
(dI/dt)c [Tj] / (dI/dt)c [Tj=125 °C]
8
7
Tj=25 °C
6
Tj=125 °C
5
10
4
3
2
VTM(V)
Tj max :
Vto = 0.85 V
1
Rd = 80 mΩ
1
0
0
1
2
3
4
5
25
Tj(°C)
50
75
100
125
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of static dV/dt
decrease of main current (di/dt)c
immunity versus junction
versus reapplied (dV/dt)c
temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
typical values
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c(V/µs)
1.0
10.0
100.0
dV/dt [Tj] / dV/dt [Tj=125 °C]
8
7
6
5
4
3
2
1
0
25
50
Tj(°C)
75
VD=VR=400 V
100
125
4/8
Doc ID 17641 Rev 2
 

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