DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BTA06T-600CWRG View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BTA06T-600CWRG
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA06T-600CWRG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BTA06T-600CWRG
Characteristics
Table 4. Thermal resistances
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (ac)
Junction to ambient
Parameter
Value
3.4
60
Unit
°C/W
Figure 1. Maximum power dissipation versus Figure 2. On-state current (rms) versus case
rms on-state current (full cycle)
temperature (full cycle)
P(W)
8
α=180 °
7
6
5
4
3
2
180°
1
IT(RMS)(A)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IT(RMS)(A)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
25
α=180°
TC(°C)
50
75
100
125
Figure 3.
On-state current (rms) versus
ambient temperature
(free air convection)
IT(RMS)(A)
2.5
α=180°
2.0
1.5
1.0
0.5
0.0
0
Tamb(°C)
25
50
75
100
125
Figure 4. Relative variation of thermal
impedance versus pulse duration
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-a)
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
1.E+00 1.E+01 1.E+02 1.E+03
Figure 5.
Relative variation of gate trigger
current, and gate trigger voltage
versus junction temperature
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
2.0
IGT Q3
typical values
IGT Q1-Q2
1.5
1.0
VGT Q1-Q2-Q3
Figure 6.
Relative variation of holding
current and latching current versus
junction temperature
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.0
typical values
1.5
IH
1.0
IL
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Doc ID 17641 Rev 2
3/8
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]