2SA0885Q View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SA0885Q Datasheet PDF : 4 Pages
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Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
8.0+–00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Features
• Output of 3 W can be obtained by a complementary pair with
2SC1846
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
−45
V
Collector to emitter voltage
VCEO
−35
V
Emitter to base voltage
VEBO
−5
V
Peak collector current
ICP
−1.5
A
Collector current
IC
−1
A
Collector power dissipation
PC
1.2 *1
W
5 *2
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
123
0.5±0.1
1.76±0.1
1: Emitter
2: Collector
3: Base
TO-126B Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
IEBO
VCBO
VCEO
hFE1 *
hFE2
VCE(sat)
fT
Cob
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
VEB = −5V, IC = 0
IC = −10 µA, IE = 0
−45
IC = −2 mA, IB = 0
−35
VCE = −10 V, IC = −500 mA
85
VCE = −5 V, IC = −1 A
50
IC = −500 mA, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Note) *: Rank classification
Rank
Q
R
S
hFE1
85 to 170 120 to 240 170 to 340
Typ Max
− 0.1
−100
−10
340
− 0.5
200
20 30
Unit
µA
µA
µA
V
V
V
MHz
pF
Note.) The Part number in the Parenthesis shows conventional part number.
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