RN2101FT View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

RN2101FT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Transistor

Toshiba 

RN2101FT~RN2106FT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101FT,RN2102FT,RN2103FT

RN2104FT,RN2105FT,RN2106FT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

Unit: mm

· High-density mount is possible because of devices housed in very thin

TESM packages.

· Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

· Wide range of resistor values are available to use in various circuit

designs.

· Complementary to RN1101FT~1106FT

Equivalent Circuit and Bias Resistor Values

C

R1

B

E

Type No.

RN2101FT

RN2102FT

RN2103FT

RN2104FT

RN2105FT

RN2106FT

R1 (kW)

4.7

10

22

47

2.2

4.7

R2 (kW)

4.7

10

22

47

47

47

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN2101FT~2106FT

Emitter-base voltage

RN2101FT~2104FT

RN2105FT, RN2106FT

Collector current

Collector power dissipation

Junction temperature

RN2101FT~2106FT

Storage temperature range

Note: Total rating

Symbol

VCBO

VCEO

VEBO

IC

PC (Note)

Tj

Tstg

Rating

-50

-50

-10

-5

-100

100

150

-55~150

JEDEC

―

JEITA

―

TOSHIBA

―

Weight: g (typ.)

Unit

V

V

V

mA

mW

°C

°C

1

2002-01-24

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