3N209 View Datasheet(PDF) - Digitron Semiconductors
Part Name
Description
Manufacturer
3N209 Datasheet PDF : 5 Pages
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DIGITRON SEMICONDUCTORS
3N209-3N210
N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
SMALL SIGNAL CHARACTERISTICS
Forward transfer admittance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0kHz)
yfs
10
Input capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz)
Reverse transfer capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz)
Ciss
-
Crss
0.005
Output capacitance
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz)
Coss
0.5
Common source noise figure
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 10mAdc, f = 500MHz)
NF
-
Common source power gain
(VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 10mAdc, f = 500MHz)
Gps
10
Bandwidth
(VDS = 15Vdc, VG2S = 4.0Vdc; ID = 10mAdc, f = 500MHz)
BW
7.0
Typ
13
4.5
0.023
2.0
4.5
13
-
Max
20
7.0
0.030
4.0
6.0
20
17
Unit
mmhos
pF
pF
pF
dB
dB
MHz
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120705
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