3N209 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
3N209 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
., One.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gale Voltage
Drain Current
Gate Current
Total Device Dissipation
@ TA = WC
Derate above 25"C
Lead Temperature, 1/16" From Seated
Surface for 10 seconds
Storage Channel Temperature Range
Operating Channel Temperature
Symbol
VDS
VDGI
voG2
ID
'G1R
'G1F
IQ2R
!G2f
PD
TL
Value
25
30
30
30
-10
10
-10
10
300
1.71
260
Tsta
Tcnannel
-65 to +176
175
Unit
Vdc
Vdc
mAdc
mAdc
mW
mvwc
°C
•c
•C
3N209
TO-72
DUAL-GATE MOSFET
UHF COMMUNICATIONS
N.CHANNEL—DEPLETION
ELECTRICAL CHARACTERISTICS OA - 26'C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
tlQ - 10 /iAdc, VQ!S = -4.0 Vdc, VGzS = 4.0 Vdc)
Gate 1 — Source Forward Breakdown Voltage
(|Q1 - 10 mAdc, VG2S = VDS = 0)
Gate 1 — Source Reverse Breakdown Voltage
«G1 - -10mAdc,VG2S - VDS = 0)
Gate 2 — Source Forward Breakdown Voltage
WGZ - 10 mAdc, VQIS - VDS - <"
Gate 2 — Source Reverie Breakdown Voltage
«G2 = - 10 mAdc, VGIS - VDS = 0)
Gate 1 — Terminal Forward Current
(VGIS - 6.0 Vdc, vQ2s - VDS = o)
Gate 1 — Terminal Reverse Current
{VGIS - -«-o Vdc, VQ2S = VDS - °)
(VGIS - -6.0 Vdc, vG2g «. VDS - °. TA = IKCC)
Gate 2 — Terminal Forward Current
(VGZS = 8.0 vdc, VGIS = VDS = 0)
Gate 2 — Terminal Reverse Current
<VGZS = -6-o Vdc, vQ1s = VDS - °>
ivG2s = -B-o Vdc, VGIS - VDS = o. TA - 1BO'C>
ON CHARACTERISTICS
Gate 1 — Zero Voltage Drain Current
(VQS - 16 Vdc, VQ,S - 0, VG2S - 4.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Vos • 1B Vdc, VG2s . 4.0 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(VDS - IB Vdc, VQJS - 4.0 Vdc, ID * 5.0 mAdc, f - 1.0 MHz)
Reverse Transfer Capacitance
(VDS • 16 Vdc, VG2S = 4.0 Vdc, ID » 6.0 mAdc, f - 1.0 MHz)
Output Capacitance
<Vos - 16 Vdc, VG2S - 4.0 Vdc, ID * 6,0 mAdc, f - 1.0 MHz)
Symbol
Mln
IVP
VIBRIDSX 25
—
V(BR)G1SSF 7.0
—
VIBRIQISSR -7,0
—
V(BR1G2SSF 7.0
—
V(BR)G2SSR -7.0
—
'G1SSF
—
—
'G.ISSR
-
-
_
!G2SSF
—
IQ2SSR
I-
IDSS
5.0
—
Vfs
Ciss
Cras
COBS
10
—
0.005
0.5
13
3.3
0.023
2.0
Unit
—
Vdc
22
Vdc
-22
Vdc
22
Vdc
-22
Vdc
20
nAdc
-20
nAdc
-10
fiAdc
20
nAdc
-20
nAdc
-10
»iAdc
30
mAdc
20
mmhos
7.0
PF
0.03
pF
4.0
PF
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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