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IRFP26N60LPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFP26N60LPBF
IR
International Rectifier IR
IRFP26N60LPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SMPS MOSFET
PD - 95011
IRFP26N60LPbF
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 210m170ns 26A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
c ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
26
17
100
470
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
d Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.8
±30
21
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 26
MOSFET symbol
D
(Body Diode)
A showing the
ISM
Ãc Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
––– ––– 100
––– ––– 1.5
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS = 26A, VGS = 0V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
170 250
210 320
670 1000
1050 1570
ns
nC
TJ = 25°C, IF = 26A
f TJ = 125°C, di/dt = 100A/µs
f TJ = 25°C, IS = 26A, VGS = 0V
f TJ = 125°C, di/dt = 100A/µs
IRRM
Reverse Recovery Current
––– 7.3 11 A TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
2/12/04
 

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