µ PA2790GR
ELECTRICAL CHARACTERISTICS (TA = 25°C. All terminals are connected.)
N-channel
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
IGSS
VGS = ±16 V, VDS = 0 V
10 µA
±10 µA
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 3 A
VGS = 10 V, ID = 3 A
1.5
2.5 V
2
S
21 28 mΩ
RDS(on)2 VGS = 4.5 V, ID = 3 A
28 40 mΩ
RDS(on)3 VGS = 4.0 V, ID = 3 A
34 53 mΩ
Input Capacitance
Ciss
VDS = 10 V
500
pF
Output Capacitance
Coss
VGS = 0 V
135
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
77
pF
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 3 A
9.2
ns
Rise Time
tr
VGS = 10 V
8.8
ns
Turn-off Delay Time
td(off)
RG = 10 Ω
28
ns
Fall Time
tf
7.4
ns
Total Gate Charge
QG
ID = 6 A
12.6
nC
Gate to Source Charge
QGS
VDD = 24 V
1.7
nC
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
VGS = 10 V
IF = 6 A, VGS = 0 V
3.8
nC
0.85
V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 6 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
18
ns
11
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Data Sheet G16954EJ2V0DS
3