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U16C40C 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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U16C40C 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers THINKISEMI
Thinki Semiconductor Co., Ltd. THINKISEMI
U16C40C Datasheet PDF : 2 Pages
1 2
U16C05 thru U16C60
®
U16C05 thru U16C60
Pb
Pb Free Plating Product
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.03 grams
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
Positive
Suffix "C"
Negative
Suffix "A"
Doubler/Series Connection
Suffix "D"
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "C"
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
U16C05C
SYMBOL U16C05A
U16C05D
VRRM
50
VRMS
35
U16C10C U16C20C
U16C10A U16C20A
U16C10D U16C20D
100
200
70
140
U16C30C
U16C30A
U16C30D
300
210
U16C40C
U16C40A
U16C40D
400
280
U16C60C
U16C60A UNIT
U16C60D
600
V
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
(JEDEC method)
150
A
Maximum Instantaneous Forward Voltage
VF
@ 8.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98
1.3
10.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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