DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

2SD1135 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
2SD1135
Renesas
Renesas Electronics Renesas
2SD1135 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SD1135
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO 80
voltage
Emitter to base breakdown
V(BR)EBO
5
voltage
Collector cutoff current
I CBO
DC current transfer ratio
hFE1*1
60
hFE2
35
Base to emitter voltage
VBE
Collector to emitter saturation VCE(sat)
voltage
Gain bandwidth product
fT
10
Collector output capacitance Cob
40
Notes: 1. The 2SD1135 is grouped by hFE1 as follows.
2. Pulse test.
Max
Unit
V
Test conditions
IC = 50 mA, RBE =
V
IE = 10 µA, IC = 0
0.1 mA
200
1.5 V
2
V
VCB = 80 V, IE = 0
VCE = 5 V, IC = 1 A*2
VCE = 5 V, IC = 0.1 A*2
VCE = 5 V, IC = 1 A*2
IC = 2 A, IB = 0.2 A*2
MHz VCE = 5 V, IC = 0.5 A*2
pF
VCB = 20 V, IE = 0, f = 1 MHz
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
5
(10 V, 4 A)
IC max (Continuous)
2
1.0
(TCD=C2O5p°Cer)atio(3n 3 V, 1.2 A)
0.5
0.2
0.1
0.05
12
(80 V, 0.06 A)
5 10 20 50 100
Collector to emitter voltage VCE (V)
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]