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BU406 데이터 시트보기 (PDF) - Power Innovations

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BU406 NPN SILICON POWER TRANSISTORS Power-Innovations
Power Innovations Power-Innovations
BU406 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCD124AA
70
tp < 300 µs
d < 2%
60 TC = 100°C
VCE = 5 V
50
40
TC = 25°C
30
20
10 TC = -55°C
0
0·1
1·0
10
IC - Collector Current - A
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCD124AB
50
TC = 25°C
tp < 300 µs
d < 2%
40
30
20
10 VCE = 1 V
VCE = 5 V
VCE = 10 V
0
0·1
1·0
10
IC - Collector Current - A
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TCD124AC
0·8
tp < 300 µs
0·7
d < 2%
0·6
IC = 8 A
IB = 2 A
0·5
0·4
0·3
IC = 4 A
0·2
IB = 0.5 A
0·1
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4
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