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BU406 데이터 시트보기 (PDF) - Power Innovations

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BU406 NPN SILICON POWER TRANSISTORS Power-Innovations
Power Innovations Power-Innovations
BU406 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA IB = 0
140
V
Collector-emitter
ICES cut-off current
IEBO
Emitter cut-off
current
VCE = 400 V
VCE = 330 V
VCE = 250 V
VCE = 200 V
VCE = 250 V
VCE = 200 V
VEB = 6 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IC = 0
TC = 150°C
TC = 150°C
BU406
BU407
BU406
BU407
BU406
BU407
5
5
0.1
mA
0.1
1
1
1
mA
hFE
VCE(sat)
Forward current
transfer ratio
Collector-emitter
saturation voltage
VCE = 10 V
VCE = 10 V
IB = 0.5 A
IC = 4 A
IC = 0.5 A
IC = 5 A
(see Notes 2 and 3)
(see Notes 2 and 3)
12
20
1
V
Base-emitter
VBE(sat) saturation voltage
IB = 0.5 A IC = 5 A
(see Notes 2 and 3)
1.2
V
Current gain
ft
bandwidth product
VCE = 5 V IC = 0.5 A
f = 1 MHz
(see Note 4)
6
MHz
Cob Output capacitance VCB = 20 V IE = 0
f = 1 MHz
60
pF
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
70 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
ts
Storage time
t(off) Turn off time
IC = 5 A
IB(end) = 0.5A
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYP MAX
2.7
750
UNIT
µs
ns
PRODUCT INFORMATION
2
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