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BU406 데이터 시트보기 (PDF) - Power Innovations

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BU406 NPN SILICON POWER TRANSISTORS Power-Innovations
Power Innovations Power-Innovations
BU406 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Copyright © 1997, Power Innovations Limited, UK
BU406, BU407
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q 7 A Continuous Collector Current
q 15 A Peak Collector Current
q 60 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp 10 ms, duty cycle 2%.
BU406
BU407
BU406
BU407
BU406
BU407
SYMBOL
VCBO
VCEX
VCEO
VEB
IC
ICM
IB
Ptot
Tj
Tstg
VALUE
400
330
400
330
200
150
6
7
15
4
60
-55 to +150
-55 to +150
UNIT
V
V
V
V
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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