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FDS6961AZ View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6961AZ
Fairchild
Fairchild Semiconductor Fairchild
FDS6961AZ Datasheet PDF : 5 Pages
1 2 3 4 5
September 2001
FDS6961AZ
Dual N-Channel Logic Level PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 3.5 A, 30 V.
RDS(ON) = 90 mΩ @ VGS = 10 V
RDS(ON) = 140 mΩ @ VGS = 4.5 V
• Low gate charge (2.1 nC typical)
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6961AZ
FDS6961AZ
13’’
©2001 Fairchild Semiconductor Corporation
Ratings
30
±20
3.5
14
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS6961AZ Rev C (W)
 

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