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VEC2820 View Datasheet(PDF) - SANYO -> Panasonic

Part NameVEC2820 SANYO
SANYO -> Panasonic SANYO
DescriptionMOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
VEC2820 Datasheet PDF : 6 Pages
1 2 3 4 5 6
VEC2820
RDS(on) -- VGS [MOSFET]
150
150
Ta=25°C
RDS(on) -- Ta
[MOSFET]
100
ID=0.5A
50
1A
1.5A
100
50
V GVSV=GG1S.S8==V24,.5.I0,DVV=,I0ID.D5=A=11A.5A
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT10935
yfs-- ID
[MOSFET]
3
2 VDS=10V
10
7
5
3
2
Ta= --25°C
25°C
75°C
1.0
7
5
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
IT10937
SW Time -- ID [MOSFET]
3
2
VDD=10V
VGS=4V
100
7
tr
5
td(off)
tf
3
2
td(on)
10
7
5
3
2
1.0
0.1
23
4.0
VDS=10V
3.5 ID=3A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT03496
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT03498
0
--100
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
1000
7
5
3
2
--50
0
50
100
150
200
Ambient Temperature, Ta -- °C
IT10936
IS -- VSD
[MOSFET]
VGS=0V
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT10938
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
Ciss
100
7
Coss
5
Crss
3
2
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT03497
ASO
[MOSFET]
3
2 IDP=12A
PW10µs
10
7
5 ID=3A
3
2
1.0
7
5
DC oper1at0i0omn 1s0ms1m1s00µs
3
2
Operation in this
area is limited by RDS(on).
0.1
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board (900mm20.8mm) 1unit
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain-to-Source Voltage, VDS -- V IT12456
No. A0849-4/6
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