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VEC2820 View Datasheet(PDF) - SANYO -> Panasonic

Part NameVEC2820 SANYO
SANYO -> Panasonic SANYO
DescriptionMOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode
VEC2820 Datasheet PDF : 6 Pages
1 2 3 4 5 6
VEC2820
Continued from preceding page.
Parameter
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz sine wave, 1 cycle
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
VF3
IR
C
trr
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
IS=3A, VGS=0V
IR=0.5mA
IF=0.3A
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
15
V
15
V
1
A
10
A
--55 to +125
°C
--55 to +125
°C
Ratings
Unit
min
typ
max
20
0.4
2.9
4.8
51
61
75
280
60
38
13
35
35
25
8.8
0.85
0.85
0.82
V
1 µA
±10 µA
1.3
V
S
66 m
85 m
113 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
15
V
0.30
0.32
V
0.32
0.35
V
0.39
0.435
V
90 µA
20
pF
10 ns
No. A0849-2/6
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